IXYS Manuals

This document is a technical information document about IXYS' HiPerRFTM Power MOSFETs F-Class product. This product is a N-channel enhancement type avalanche rated, low Qg, low intrinsic Rg, high dV/dt, low trr RF power MOSFET.

This document is the datasheet of IXFH 26N60Q, introducing the features and characteristics of this product, including maximum ratings, characteristic values, package form, etc.

IXFH/IXFT IXFK are IXYS company's N-channel enhancement mode high dv/dt, low trr 600V power MOSFETs, with a maximum voltage of 600V and a maximum current of 26A/28A. It has a fast switching speed (trr is 250ns), and can be used in motor drives, switch power supplies and other applications.

IXFH/IXFT 24N50Q and 26N50Q are N-channel enhancement mode Avalanche Rated, Low Qg, High dv/dt power MOSFETs manufactured by IXYS.

26N50P is a N-channel MOSFET produced by IXYS. It has a maximum current of 26A, a minimum on-resistance of 230mΩ, and a maximum voltage of 500V.

This is the datasheet for IXFH 22 N55, which is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET. Its maximum voltage is 550 V, continuous current is 22 A, and switching time is 250 ns.

This document introduces the HiPerFETTM power MOSFET series from IXYS. These products are N-channel enhancement mode high dv/dt, low trr, HDMOSTM family. The features include international standard packages, low RDS(on), rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance - easy to drive and protect, fast intrinsic rectifier, etc. They are suitable for applications such as DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, etc.

This data sheet lists the characteristic values of HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances.

IXFH/IXFT is a N-channel enhancement mode MOSFET device released by IXYS, with a rated voltage of 500V and a rated current of 40A. It features low gate charge and capacitance, easy to drive, fast switching. The device adopts international standard package, low RDS(on), rated for unclamped inductive load switching (UIS) and mold epoxies meet UL 94 V-0 flammability classification.

This document describes the features and characteristics of IXYS' HiPerFETTM power MOSFETs, including international standard packages, low gate charge and capacitance, and low RDS(on).

This document introduces the HiPerFETTM Power MOSFET product series from IXYS, which features international standard packages, low RDS(on), rugged high voltage capability, and fast intrinsic diode. It is suitable for applications such as DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies.

The document describes the features and characteristics of the HiPerFETTM power MOSFET products produced by IXYS, including maximum ratings, symbol test conditions, and maximum electrical performance parameters.

The document describes the features and characteristics of a certain product.

HiPerFETTM Power MOSFETs are N-Channel Enhancement Mode with High dv/dt, Low trr, and HDMOSTM Family.