IXYS Manuals

IXTQ 64N25P is a N-channel enhancement mode power MOSFET from IXYS. Its maximum rated voltage is 250V, maximum current is 64A, and typical RDS(on) is 48mΩ.

IXTQ 69N30P is a N-Channel Enhancement Mode Power MOSFET with VDSS = 300 V, ID25 = 69 A and RDS(on) = 49 mΩ. It features international standard packages, unclamped inductive switching (UIS) rating and low package inductance.

01N100 is a high voltage MOSFET produced by IXYS. Its features are international standard package JEDEC TO-251 AA, low RDS(on), rugged polysilicon gate cell structure and fast switching times.

The document describes symbol test conditions and maximum ratings, as well as the features and characteristics of a high voltage MOSFET device.

IXTP 1R6N50P is a N-Channel Enhancement Mode power MOSFET produced by IXYS. Its main features include international standard packaging, unclamped inductive switching (UIS) rating, low package inductance, easy to drive and protect.

This is a N-Channel Enhancement Mode MOSFET with a maximum voltage of 100V and a maximum current of 110A. Its typical impedance is 15 mΩ.

The document describes the N-channel enhancement mode power MOSFETs of TO-204 AA (IXTM) and TO-247 AD (IXTH) models produced by IXYS. The products feature low RDS(on), rugged polysilicon gate cell structure, and low package inductance. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies, and DC choppers, among other applications.

This datasheet provides specifications of IXTH11P50N, including maximum ratings, characteristic values, characteristic curves, package and pin diagram, etc.

This data sheet provides the maximum ratings, characteristics, characteristics, applications and advantages of the 7P50 and 8P50 P-channel enhancement type avalanche rated standard power MOSFET.

This is a technical document about IXTK 120N25 VDSS = 250 V ID25 = 120 A product, which introduces the features and characteristics of the product, including low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, international standard package, fast switching time, etc.

IXTK 140N20P is a high performance N-channel enhancement mode power MOSFET. It has a maximum voltage of 200V and a maximum current of 140A. It has international standard packages, unclamped inductive switching (UIS) rating, low package inductance, etc., easy to drive and protect.

This datasheet is about IXTK 180N15's technical parameters, including maximum voltage, maximum current, minimum resistance.

This document describes the features and characteristics of IXYS' IXTK and IXTN series N-channel enhancement mode MOSFET products.