IXYS Manuals

IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.

The document describes the features and characteristics of IXYS products, including RF capability, low gate resistance, shock resistance, low package inductance, and fast intrinsic rectifier. It is suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, laser drivers, and RF amplifiers.

IXGH24N50B/24N60B is a high frequency IGBT produced by IXYS, with high current handling capability, high power density, high switching speed and other characteristics, suitable for AC motor speed control, DC servo and robot drive, DC chopper, uninterruptible power supply, switched mode and resonant mode power supply etc.

DE375-501N21A RF Power MOSFET is a RF power MOSFET produced by IXYS. Its maximum ratings are VDSS = 500 V, ID25 = 25 A, RDS(on) = 0.22 Ω, and PDC = 940 W. Its features are high isolation voltage (>2500V), excellent thermal transfer, increased temperature and power cycling capability, low gate charge and capacitance, easier to drive, faster switching, low RDS(on), very low insertion inductance (<2nH), and no beryllium oxide (BeO) or other hazardous materials.

21N50, 24N50, 26N50 are IXYS's N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family series products, with low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance-easy to drive and protect, fast intrinsic rectifier etc.

DSS 25-0025B is a Schottky rectifier produced by IXYS. It has an international standard package, very low VF, extremely low switching losses, low IRM values, epoxy meets UL 94V-0. Applications include rectifiers in switch mode power supplies (SMPS) and free wheeling diodes in low voltage converters.

the ixys IXGH20N30 is a high power density and high switching speed igbt, suitable for ac motor speed control, dc servo and robot drives, dc choppers, ups, switched-mode and resonant-mode power supplies.

This document is the datasheet of IXYS VUO 105-12NO7 1200V 140A bridge rectifier. It mainly introduces the features and characteristics of the product, including maximum current, rated voltage, package type, impedance, rated current, etc.

This data sheet provides the characteristics parameters of IXYS IXSH series 600V IGBT.

IXTU01N80 is a high voltage MOSFET produced by IXYS company. Its features are international standard JEDEC TO-251 AA, TO-252 AA packages, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and fast switching times.

30N60P is a N-channel enhancement mode avalanche rated power MOSFET produced by IXYS. Its maximum voltage is 600V, the maximum current is 30A, and the on-resistance is less than 240mΩ. The product has the characteristics of fast recovery diode, unclamped inductive switching (UIS) rating, international standard packages, and low package inductance.

This document describes the features and characteristics of the PolarHVTM Power MOSFET IXTQ 36N50P produced by IXYS, including international standard packages, Unclamped Inductive Switching (UIS) rating, low package inductance, etc.