IXYS Manuals

This document describes the features and characteristics of the N-Channel Enhancement Mode MOSFET products produced by IXYS, including high voltage, low RDS(on), rugged polysilicon gate cell structure, and fast switching times. The product is suitable for applications such as switch-mode and resonant-mode power supplies, flyback inverters, DC choppers, and high frequency matching.

This document describes the features and characteristics of the N-Channel Enhancement Mode power MOSFET product produced by IXYS in 2005, including international standard packages, unclamped inductive switching (UIS) rating, and low package inductance. The product is easy to mount, saves space, and has high power density.

This document is the datasheet of IXTQ 110N055P, which mainly introduces the maximum voltage, rated current, drain current, gate-source voltage, drain-source voltage, gate-source current, and drain-source resistance of the product.

IXTH 12N90 is a TO-247 packaged N-channel enhancement mode MOSFET with a maximum voltage of 900V and a maximum current of 12A. It has a fast switching time and is suitable for applications such as switch-mode power supplies and inverters.

This document introduces the high current power MOSFET products from IXYS. The features of the products include international standard package, 3000V isolation voltage, low RDS (on), rugged polysilicon gate cell structure, low drain-to-case capacitance, and low package inductance. The products are suitable for various applications.

5N100 and 5N100A are N-channel enhancement mode standard power MOSFETs from IXYS. The products have international standard packages, low RON, high reliability and other characteristics. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS) and DC choppers.

This document describes the features and characteristics of the IXTH 50P10 standard power MOSFET product from IXYS, including international standard package, low RDS(on) value, rugged polysilicon gate cell structure, avalanche rated, and low package inductance. This product is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment, and it offers advantages such as easy mounting, space savings, and high power density.

The document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode product from IXYS, including international standard packages, low on-resistance, rugged polysilicon gate cell structure, low package inductance, and fast switching times. The product is suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.

IXTH 35N30/40N30/40N30 MegaMOSTMFET N-Channel Enhancement Mode power MOSFET devices, with a maximum operating voltage of 300V, a maximum current of 35A/40A/40A, and a fast switching time, are used in switch-mode power supplies, inverters, motor drives and other fields.

This document is a specification sheet for a standard power MOSFET product produced by IXYS. The product is a P-channel enhancement mode MOSFET with a voltage rating of 200V, a current rating of 24A, and an on-resistance of 0.15Ω. Its features include international standard package, low on-resistance, ruggedness, easy to drive and protect, etc. It is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment.

The document describes the features and characteristics of the product, IXTH 30N50.

IXTH / IXTM 21N50 and 24N50 are IXYS's MegaMOSTMFET N-channel enhancement mode MOSFETs with a maximum voltage of 500 V, a maximum current of 21 A and 24 A, and a maximum power of 300 W.

The document introduces a P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET (IXTH 16P20) from IXYS. It features an international standard package, low RDS(on), rugged polysilicon gate cell structure, and unclamped inductive switching (UIS) capability.

The document describes the features and characteristics of IXYS Corporation's MegaMOSTMFET N-Channel Enhancement Mode Power MOSFET. This MOSFET has a maximum voltage rating of 700V, maximum current of 15A, an on-state resistance of 0.45Ω, and low RDS(on) value. It is suitable for applications such as switch-mode and resonant-mode power supplies, motor controls, and uninterruptible power supplies.