IXYS Manuals

This is the datasheet for IXFH 22 N55, which is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET. Its maximum voltage is 550 V, continuous current is 22 A, and switching time is 250 ns.

26N50P is a N-channel MOSFET produced by IXYS. It has a maximum current of 26A, a minimum on-resistance of 230mΩ, and a maximum voltage of 500V.

IXFH/IXFT 24N50Q and 26N50Q are N-channel enhancement mode Avalanche Rated, Low Qg, High dv/dt power MOSFETs manufactured by IXYS.

IXFH/IXFT IXFK are IXYS company's N-channel enhancement mode high dv/dt, low trr 600V power MOSFETs, with a maximum voltage of 600V and a maximum current of 26A/28A. It has a fast switching speed (trr is 250ns), and can be used in motor drives, switch power supplies and other applications.

This document is the datasheet of IXFH 26N60Q, introducing the features and characteristics of this product, including maximum ratings, characteristic values, package form, etc.

This document is a technical information document about IXYS' HiPerRFTM Power MOSFETs F-Class product. This product is a N-channel enhancement type avalanche rated, low Qg, low intrinsic Rg, high dV/dt, low trr RF power MOSFET.

The document describes the features and characteristics of a product, including its performance, functions, etc.

This document mainly introduces the features and characteristics of IXYS's Q-Class N-channel enhancement mode avalanche rated low Qg, high dv/dt power MOSFET products, including maximum ratings, characteristic values, packaging, installation dimensions, and typical application circuits.

IXFH20N80Q and IXFK20N80Q are IXYS's N-channel enhancement mode avalanche rated, low Qg, high dv/dt power MOSFETs. The main features are low RDS (on) low Qg, avalanche energy and current rated, fast intrinsic rectifier, easy to mount, space saving, high power density.

This datasheet lists the maximum ratings, characteristic values, etc. of the IXFH type MOSFET device.

IXFH 13N80 is a N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Power MOSFET

IXFH 140N10P is a N-Channel Enhancement Mode Fast Intrinsic Diode, Avalanche Rated from IXYS with Unclamped Inductive Switching (UIS) rated, Low package inductance - easy to drive and to protect.

The document describes the features and characteristics of IXYS' N-channel enhancement mode MOSFET products, including maximum ratings, maximum operating temperature, maximum current, etc.

This document introduces the HiPerFETTM power MOSFET products from IXYS. The product features a double metal process for low gate resistance, international standard packages, and epoxy that meets UL 94 V-0 flammability classification. Additionally, the product has low RDS(on), low Qg, and is rated for voltage and current avalanche. It is suitable for various applications such as DC-DC converters, switched-mode and resonant-mode power supplies, and DC choppers.

This datasheet provides information about IXFH 15N100Q, including maximum ratings, characteristic values, symbols, and packages.