Fairchild manuals, page 141
FAIRCHILD FDG316P Manual
The document describes the features and characteristics of the FDG316P P-Channel Logic Level MOSFET product, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and fast switching performance, making it suitable for low voltage and battery-powered applications.
FAIRCHILD FDG1024NZ Manual
This document is a technical manual for Fairchild Semiconductor Corporation's FDG1024NZ Dual N-Channel Power Trench® MOSFET
FAIRCHILD FDG327N 20V N-Channel PowerTrench MOSFET handbook
FDG327N is a N-Channel MOSFET from Fairchild Corporation. It has a very low RDS(ON) and gate charge, making it ideal for use in small switching power supplies.
FAIRCHILD FDG327NZ 20V N-Channel PowerTrench MOSFET handbook
The FDG327NZ 20V N-Channel PowerTrench™ MOSFET is a product from Fairchild Semiconductor Corporation. It is mainly used in DC/DC converters, power management and load switches. This product has low RDS(ON), low gate charge, high performance and high power.
FAIRCHILD FDG328P P-Channel 2.5V Specified PowerTrench MOSFET handbook
The FDG328P is a P-channel MOSFET produced by Fairchild Semiconductor. It features a 2.5V gate drive voltage, a maximum current of 1.5A and a maximum drain-source voltage of -20V. It uses Fairchild Semiconductor's advanced PowerTrench process, which provides low gate charge, high performance trench technology and a compact SC70-6 surface mount package.
FAIRCHILD FDG330P P-Channel 1.8V Specified PowerTrench MOSFET handbook
FDG330P is a P-Channel 1.8V specified PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge and extremely low RDS(ON), which is suitable for battery management applications.
FAIRCHILD FDG410NZ Single N-Channel PowerTrench MOSFET handbook
The FDG410NZ is a single N-channel power MOSFET with an extremely low rDS(on) and gate charge (Qg) that is optimized for use in small switching regulators, DC/DC converters, power management and load switches.
FAIRCHILD FDG6301N Dual N-Channel Digital FET handbook
The FDG6301N is a dual N-channel digital field effect transistor with a maximum voltage of 25 V and a maximum current of 0.22 A. It features a low threshold voltage, high density process, and compact package, making it ideal for low voltage applications.
FAIRCHILD FDG6303N Dual N-Channel Digital FET handbook
FDG6303N is a dual N-channel digital field-effect transistor with symmetrical pinouts and low voltage application characteristics.
FAIRCHILD FDG6304P Dual P-Channel Digital FET handbook
This document describes the features and characteristics of the FDG6304P Dual P-Channel, Digital FET released in July 1999.
FAIRCHILD FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET handbook
FAIRCHILD FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET handbook
This document describes the features and characteristics of the FDG6308P P-Channel MOSFET, which is suitable for battery management and load switch applications.
FAIRCHILD FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET handbook
This document describes the features and characteristics of the FDG6316P P-Channel 1.8V MOSFET product produced by Fairchild Semiconductor Corporation in 2001. It is suitable for applications such as battery management and load switches.
FAIRCHILD FDG6317NZ handbook
FDG6317NZ is a dual N-channel MOSFET with extremely low RDS(ON), and it is suitable for applications such as DC/DC converters, power management and load switches.
FAIRCHILD FDG6318P Dual P-Channel Digital FET handbook
FDG6318P is a dual P-Channel logic level enhancement mode MOSFET produced by Fairchild Semiconductor using the PowerTrench process, with a small resistance, suitable for low voltage applications