Fairchild Manuals - Page 136

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Fairchild manuals, page 136

  • FAIRCHILD FDG8842CZ Manual

    FDG8842CZ Complementary PowerTrench® MOSFET is a high performance, low voltage switch device that is ideal for low voltage applications. The device is manufactured using Fairchild's proprietary high cell density DMOS technology, which provides very low on-state resistance. This makes the device ideal for applications where low power consumption is critical.

  • FAIRCHILD FDG8850NZ Manual

    FDG8850NZ is a dual N-channel logic level enhancement mode field effect transistor produced by Fairchild Semiconductor, using Fairchild's proprietary high cell density DMOS technology. It has a very low on-state resistance and is very suitable for use in 3V circuits.

  • FAIRCHILD FDH038AN08A1 Manual

  • FAIRCHILD FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 Manual

    FDP047AN08A0/FDI047AN08A0/FDH047AN08A0 is a N-channel power transistor from Fairchild Semiconductor Corporation. Its maximum drain-source voltage is 75V, maximum drain current is 80A, and maximum on-resistance is 4.7mΩ. This product has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features. It can be used in 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems.

  • FAIRCHILD FDH055N15A Manual

    FDH055N15A is a N-Channel MOSFET with a rated voltage of 150V and a maximum current of 167A.

  • FAIRCHILD FDH44N50 Manual

    The document introduces a Fairchild semiconductor product called FDH44N50. This product is an N-channel SMPS power MOSFET with features such as 44A continuous drain current, 500V drain-to-source voltage, and 0.12 Ohm on-resistance. It is suitable for various switch mode power supply applications, such as PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and high-speed switching. The product features low gate charge Qg, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced on-resistance, reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.

  • FAIRCHILD FDH45N50F_F133 Manual

    FDH45N50F_F133 is a 500V N-Channel MOSFET with RDS(on) of 0.12Ω (at VGS = 10V) and a low gate charge of 105 nC (typical).

  • FAIRCHILD FDI030N06 Manual

    The FDI030N06 is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It features low RDS(on), fast switching speed and low gate charge.

  • FAIRCHILD FDP038AN06A0 FDI038AN06A0 Manual

    FDP038AN06A0 / FDI038AN06A0 is a 60V, 80A, 3.8mΩ N-Channel PowerTrench® MOSFET. Its features include: rDS(ON) = 3.5mΩ (typical), VGS = 10V, ID = 80A; Qg(tot) = 95nC (typical), VGS = 10V; low Miller charge; low QRR body diode; UIS capability (single pulse and repetitive pulse).

  • FAIRCHILD FDI040N06 Manual

    This datasheet lists the features, maximum ratings, thermal characteristics and more information of FDI040N06 N-Channel PowerTrench® MOSFET.

  • FAIRCHILD FDP045N10A FDI045N10A Manual

    FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum power dissipation is 263W, the switching speed is fast, the gate charge is low, and it uses high-performance trench technology. RDS(on) is extremely low, making it an ideal product for high power and large current handling

  • FAIRCHILD FDI150N10 Manual

    This document describes the features and characteristics of FDI150N10 N-Channel PowerTrench® MOSFET, including low RDS(on), fast switching speed, low gate charge, etc.

  • FAIRCHILD FDL100N50F Manual

    The FDL100N50F N-Channel MOSFET is Fairchild's proprietary product, which uses Fairchild's proprietary planar stripe DMOS technology, and has the characteristics of low on-state resistance, fast switching, high energy pulse, RoHS compliance, etc.

  • FAIRCHILD FDM3622 Manual

    The FDM3622 N-Channel PowerTrench® MOSFET is a 100V, 4.4A, 60mΩ MOSFET with features including low Miller charge, low QRR, body diode, high frequency optimized efficiency, UIS capability (single pulse and repetitive pulse) and RoHS compliance.

  • FAIRCHILD FDMA1023PZ Manual

    FDMA1023PZ Dual P-Channel PowerTrench® MOSFET is a low-on-state-resistance device designed for battery charge switch applications in cellular handset and other ultra-portable applications.