Fairchild Semiconductor FDG8842CZ Complementary PowerTrench MOSFET Datasheet

FDG8842CZ Complementary PowerTrench® MOSFET is a high performance, low voltage switch device that is ideal for low voltage applications. The device is manufactured using Fairchild's proprietary high cell density DMOS technology, which provides very low on-state resistance. This makes the device ideal for applications where low power consumption is critical.


Fairchild Semiconductor FDG8842CZ Complementary PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
456 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
22AD74EF9BC3C3A9C43556DAAD982EAB

About this manual

The FDG8842CZ is a complementary PowerTrench MOSFET containing one N-Channel and one P-Channel device. It is produced using Fairchild's proprietary high cell density DMOS technology to minimize on-state resistance. The device is designed for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs, operating in 3V circuits with very low gate drive requirements.

What's inside

  • Features
  • General Description
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking
  • Ordering Information

Specifications

Package TypeSC70-6

Frequently asked questions

What is the package type for the FDG8842CZ?

The device uses a very small package outline SC70-6.

Is the FDG8842CZ RoHS compliant?

Yes, the device is RoHS Compliant.

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