Fairchild manuals, page 104
FAIRCHILD FQA55N25 handbook
This document mainly introduces the features and advantages of QFET QFET QFET QFET
FAIRCHILD FQA46N15 FQA46N15_F109 handbook
FQA46N15 is a 150V N-channel MOSFET from Fairchild. Its features are RDS(on) = 0.042 Ω @VGS = 10 V, low gate charge (typ 85 nC), low Crss (typ 100pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating
FAIRCHILD 2N7052/2N7053/NZT7053 handbook
2N7052 / 2N7053 / NZT7053 is an NPN Darlington transistor designed for applications requiring extremely high gain and high breakdown voltage. It can handle collector currents up to 1.0A.
FAIRCHILD FQA44N30 handbook
The document describes the features of QFET QFET QFET QFET, including brand, model, power, voltage and frequency
FAIRCHILD 2N7051 handbook
This document provides the absolute maximum ratings and electrical characteristics of the 2N7051 NPN epitaxial silicon transistor. It includes parameters such as collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and storage temperature.
FAIRCHILD FQA40N25 handbook
This document introduces the overview, main features and advantages of QFET, and provides application cases of QFET in communication networks and computer storage.
FAIRCHILD FQA36P15 150V P-Channel MOSFET Manual
The FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET is a high-efficiency, fast switching P-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology to improve switching speed, reduce on-state resistance and withstand high energy pulses in the avalanche and commutation mode, while also improving dv/dt capability.
FAIRCHILD FQA32N20C 200V N-Channel MOSFET Manual
The FQA32N20C 200V N-Channel MOSFET is a Fairchild-produced enhancement mode N-channel power field-effect transistor that uses Fairchild's proprietary planar DMOS technology. It has a low on-state resistance, excellent switching performance, and a high energy pulse withstand capability. It is suitable for high-efficiency switching DC/DC converters and switch-mode power supplies.
FAIRCHILD FQA30N40 400V N-Channel MOSFET Manual
FAIRCHILD FQA28N15 Manual
This document describes the features and characteristics of the FQA28N15 N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supply.
FAIRCHILD FQA27N25 250V N-Channel MOSFET Manual
The document describes the features and characteristics of QFET products.
FAIRCHILD FQA24N60 600V N-Channel MOSFET Manual
This document describes the features and characteristics of the FQA24N60 600V N-Channel MOSFET product produced by Fairchild Semiconductor International, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. These products are well suited for high efficiency switch mode power supplies.
FAIRCHILD FQA19N60 600V N-Channel MOSFET Manual
The FQA19N60 is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which features ultra-low on-state resistance, superior switching performance, and high-energy pulse handling capability. It is well suited for high efficiency switch mode power supplies.
FAIRCHILD FQA170N06 60V N-Channel MOSFET Manual
This file is about FQA170N06's datasheet. This product is a N-Channel enhancement mode power field effect transistors. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating.
FAIRCHILD 2N7002MTF Manual
The document describes the features and characteristics of the 2N7002MTF product, including lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area, and improved high temperature reliability.