Fairchild Manuals - Page 105

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Fairchild manuals, page 105

  • FAIRCHILD FQA160N08 80V N-Channel MOSFET Manual

    FQA160N08 is a 80V N-channel MOSFET produced by Fairchild Semiconductor International. It features low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

  • FAIRCHILD FQA140N10 100V N-Channel MOSFET Manual

    This document is an introduction to the FQA140N10 QFET QFET QFET QFET TM FQA140N10 100V N-Channel MOSFET produced by Fairchild Semiconductor International. This product is manufactured using Fairchild's proprietary DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  • FAIRCHILD FQA13N80_F109 800V N-Channel MOSFET Manual

    This document describes the features and characteristics of the FQA13N80_F109 800V N-Channel MOSFET product introduced by Fairchild Semiconductor Corporation in 2007, including 12.6A current, 0.75Ω RDS(on), low gate charge, and low Crss.

  • FAIRCHILD FQA13N50CF 500V N-Channel MOSFET Manual

    The FQA13N50CF is a 500V N-channel MOSFET from Fairchild with a 15A rating, 0.48 ohm RDS(on) and 43nC gate charge. This device is made using Fairchild's proprietary planar stripe DMOS technology and features a low on-resistance, high switching speed and a fast-recovery body diode. It is well-suited for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology.

  • FAIRCHILD FQA11N90C_F109 900V N-Channel MOSFET Manual

    The FQA11N90C_F109 is a 900V N-channel MOSFET that features low gate charge (typical 60 nC), low Crss (typical 23pF), fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.

  • FAIRCHILD FQA11N90 FQA11N90_F109 900V N-Channel MOSFET Manual

    FQA11N90 / FQA11N90_F109 is a N-Channel MOSFET with a maximum voltage of 900V and a rated current of 11.4A. It features low gate charge, low gate resistance, low gate reverse capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, etc. It is suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.

  • FAIRCHILD FQA10N80C_F109 800V N-Channel MOSFET Manual

    This document describes the features and characteristics of the FQA10N80C_F109 800V N-Channel MOSFET, including 10A current, 1.1Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.

  • FAIRCHILD FDZ663P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Manual

    FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET, the maximum resistance of this product is 134 mΩ, it occupies PCB area 0.64 mm2, the package height is less than 0.4 mm, it is a low power, miniaturization, high performance MOSFET.

  • FAIRCHILD FDZ661PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Manual

    The FDZ661PZ is a P-channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET from Fairchild. Its features include a maximum rDS(on) of 140 mΩ, a small PCB area, a low package height, and a high ESD protection level.

  • FAIRCHILD FDZ391P P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET Manual

    The FDZ391P is a 1.5V P-channel WL-CSP MOSFET from Fairchild Semiconductor. This device features a low RDS(on), low power consumption, and a small package, making it suitable for battery management, load switching, and battery protection applications.

  • FAIRCHILD FDZ375P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Manual

    The FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET is a product from Fairchild Semiconductor Corporation. The product features an extremely low RDS(on) and a very small PCB area, making it ideal for battery management, load switching and battery protection applications.

  • FAIRCHILD FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Manual

    FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET is a low-power, high-performance P-channel MOSFET specifically designed for battery management systems (BMSs) and other applications such as load switches and battery protection. The device is built on Fairchild's advanced 1.5 V PowerTrench® process with state-of-the-art “fine pitch” Thin WLCSP packaging process, which minimizes both PCB space and rDS(on).

  • FAIRCHILD FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Manual

    The FDZ197PZ is a P-channel power MOSFET designed using the 1.5V PowerTrench process and WL-CSP packaging technology. It features low RDS(on), small PCB footprint, ultra-thin packaging, low gate charge, etc. It is suitable for applications such as battery management, load switches, and battery protection.

  • FAIRCHILD FDZ193P handbook

    The FDZ193P is a Fairchild P-Channel 1.7V PowerTrench® WL-CSP MOSFET with a maximum RDS(on) of 90 mΩ @VGS=-4.5V, ID=-1A. It occupies only 1.5 mm2 of PCB area and is less than 0.65 mm thick when mounted to a PCB. It is RoHS compliant.

  • FAIRCHILD FDZ192NZ handbook

    The FDZ192NZ is a N-channel 1.5V PowerTrench® thin WL-CSP MOSFET designed by Fairchild Semiconductor Corporation. The device features an extremely low RDS(on), and can operate in a voltage range of 1.5V to 20V with a maximum current of 5.3A.