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This document describes the features and characteristics of the UniFET TM FDA24N40F N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has features such as 400V voltage, 23A current, 0.19Ω resistance, etc., and is suitable for high efficient switched mode power supplies and active power factor correction.
FDA20N50F N-Channel MOSFET is a high performance N-channel enhancement mode power field effect transistor manufactured by Fairchild. The device features low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested and is well suited for high efficient switched mode power supplies and active power factor correction applications.
The FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using its proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA18N50 500V N-Channel MOSFET, including 19A current, 500V voltage, low charge and capacitance, fast switching speed, etc.
This document describes the features and characteristics of the FDA15N65 650V N-Channel MOSFET from the UniFET TM series, including 16A current, 650V voltage, 0.44Ω on-state resistance, low gate charge, and fast switching speed.
The FDA032N08 is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has low RDS(on), high switching speed, low gate charge, high performance Trench technology and is RoHS compliant. It is suitable for DC/DC converters/synchronous rectification applications.
SupreMOS TM FCP7N60N/FCPF7N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and has a typical RDS(on) of 0.46 ohms and a typical Qg of 17.8 nF. It is RoHS compliant.
This document describes the features and characteristics of FCPF400N60 N-Channel MOSFET, including maximum drain current, thermal characteristics, maximum operating temperature range, etc.
FCP9N60N / FCPF9N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. It provides world class Rsp, superior switching performance and ruggedness.
FCP7N60/FCPF7N60/FCPF7N60YDTU is a new generation high voltage MOSFET family from Fairchild Semiconductor Corporation. It features low on-resistance, low gate charge, and is suitable for various AC/DC power conversion and switching mode operation.
FCP4N60 is a 600V N-Channel MOSFET with low conduction loss, superior switching performance, and high voltage withstand capability. It is suitable for various AC/DC power conversion applications.
The FCP380N60E / FCPF380N60E is a 600V N-channel MOSFET from Fairchild Semiconductor Corporation with a maximum rating of 600V and a maximum on-resistance of 380mΩ. It has ultra-low gate charge and low effective output capacitance.
This document describes the features and characteristics of the FDC6320C dual N&P channel digital field effect transistor released in October 1997, including parameters such as operating voltage, maximum power, temperature range, etc. The product has low-level gate drive requirements and can be directly operated in 3V circuits. It is suitable for low voltage applications as a replacement for bipolar digital transistors.
This document describes Fairchild Semiconductor's FDC6318P Dual P-Channel 1.8V PowerTrench MOSFET. The product is produced using advanced PowerTrench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance.
