This page provides manuals, user guides, handbooks, instructions, specification, instruction, maintenance manual for Fairchild Automation control Equipment, Electronic Original, ...
FCH76N60NF is a 600V N-channel MOSFET from Fairchild Semiconductor Corporation. It is fabricated using FRFET technology, and features low on-resistance, ultra-low gate charge, and low effective output capacitance. It has been tested for 100% avalanche and is RoHS compliant.
FCH76N60N is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and features 600V of maximum voltage, 36mΩ of on-resistance, 100% avalanche testing, and RoHS compliance.
SuperFETTM is Fairchild's proprietary, new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
FCH22N60N is a high voltage super-junction MOSFET from Fairchild Semiconductor, which has low on-resistance, ultra low gate charge and high avalanche capability.
FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ is a MOSFET product launched by Fairchild Semiconductor Corporation. This product uses deep trench filling process and features RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A, ultra low gate charge (Typ.Qg = 17.8nC) and low effective output capacitance. It meets RoHS standards.
This document describes the features and characteristics of the FCD7N60/FCU7N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including ultra-low gate charge, low output capacitance, and high voltage tolerance.
This is a FCB36N60N N-channel MOSFET from Fairchild, with a rated voltage of 600V and a rated current of 36A. Its features include: RDS(on) = 81mΩ (Typ.) @ VGS = 10V, ID = 18A; ultra low gate charge (Typ. Qg = 86nC); low effective output capacitance; 100% avalanche tested; RoHS compliant.
FCB20N60F is a 600V N-CHANNEL FRFET produced by Fairchild Semiconductor Corporation. Its main features are the extremely low on-resistance Rds(on)=0.15�, the fast recovery time trr = 160ns, the low output capacitance Coss.eff=165pF, and the 100% avalanche tested.
This document describes the features and characteristics of the FCB20N60 600V N-Channel MOSFET product from Fairchild Semiconductor Corporation, including 650V drain-source voltage, 0.15Ω on-resistance, low gate charge, and low output capacitance.
