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The FDB035AN06A0 is a 60V, 80A, 3.5mΩ N-channel PowerTrench® MOSFET. It features low Miller charge, low Qrr body diode, UIS capability (single pulse and repetitive pulse), and is qualified to AEC Q101.
This document describes the features and characteristics of the FDB031N08 N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, including fast switching speed, low gate charge, high performance trench technology for extremely low on-state resistance, and high power and current handling capability.
FDB024N06 N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This device features low RDS(on), fast switching speed, low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectification.
The FDA8440 N-Channel PowerTrench® MOSFET is a 40V, 100A, 2.1mΩ power MOSFET from Fairchild Semiconductor Corporation. It is mainly used in automotive engine control, powertrain management, motors, solenoids, electronic steering, integrated starter/alternator, distributed power architectures and VRMs.
The FDA70N20 200V N-Channel MOSFET is a low-resistance, high-performance N-channel enhancement mode power field effect transistor manufactured using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction.
This document describes the features of Fairchild Semiconductor Corporation's UniFET TM FDA69N25 250V N-Channel MOSFET, including 69A current, 250V voltage, low charge, and fast switching.
FDA59N30 is a 300V N-channel MOSFET from Fairchild Semiconductor. It features 59A maximum current, 0.056 ohms on-resistance, 77 nC gate charge, 80 pF capacitance, fast switching speed, 100% avalanche tested and improved dv/dt capability.
FDA59N25 is a 250V N-channel MOSFET produced by Fairchild. It has a maximum current of 59A, a RDS(on) of 0.049Ω, a gate charge of 63nC and a Crss of 70pF. It is well suited for high efficiency switched mode power supplies and active power factor correction.
This document describes the FDA38N30 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The features include a drain-to-source voltage of 300V, a drain current of 38A, an on-state resistance of 0.085Ω, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance. The product is suitable for high-efficiency switched mode power supplies and active power factor correction.
This document introduces Fairchild's UniFET TM FDA28N50F N-Channel MOSFET, which has a voltage of 500V, a current of 28A, and a resistance of 0.175Ω. Its features include low gate charge, low output capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.
This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA28N50 N-Channel MOSFET product, including a rated voltage of 500V, a rated current of 28A, and an on-state resistance of 0.155Ω.
This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA24N50F N-Channel MOSFET, including a drain-to-source voltage of 500V, a drain current of 24A, and an on-state resistance of 0.2Ω.
FDA24N50 N-Channel MOSFET is a high-performance MOSFET produced by Fairchild. It features low resistance, low gate charge, low Crss, fast switching, 100% avalanche testing, and is well suited for high-efficiency power supply and active power factor correction applications.
