The SS8050 is a NPN epitaxial silicon transistor from Fairchild Semiconductor Corporation. It has a maximum collector current of 1.5 A and a maximum collector power of 2 W.
This document is a technical datasheet for the Fairchild Semiconductor $S8050, an NPN epitaxial silicon transistor. It specifies that the device is suitable for use in Class B push-pull output amplifiers of portable radios and is complementary to the SS8550 model.
The datasheet provides absolute maximum ratings, electrical characteristics including current gain and breakdown voltages, typical performance characteristics graphs, and physical dimensions for the TO-92 package.
| Collector Power Dissipation | 2W (Tc=25°C) |
|---|---|
| Collector-Base Voltage | 40 V |
| Collector-Emitter Voltage | 25 V |
| Emitter-Base Voltage | 6 V |
| Junction Temperature | 150 °C |
Yes, it is complimentary to the SS8550.
It has a collector power dissipation rating of 2 W when the case temperature is 25°C.
The collector-base and collector-emitter voltages must not exceed 40 V and 25 V, respectively.