Fairchild Manuals

FDB13AN06A0/FDP13AN06A0 is a N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor. Its rated voltage is 60V, rated current is 62A, and on-resistance is 13.5mΩ.

This product is a N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse withstand capability, and is well suited for high efficiency switching mode power supplies and active power factor correction applications.

This product is an N-channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. It has low on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This product is well suited for high efficient switched mode power supplies and active power factor correction.

This document describes the features and characteristics of the UniFET TM FDB12N50F N-Channel MOSFET product produced by Fairchild Corporation, including low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.

This document describes the features and characteristics of FDB120N10 N-Channel PowerTrench® MOSFET, including low on-state resistance, fast switching speed, low gate charge, and high power handling capability.

FDB088N08 N-Channel PowerTrench® MOSFET is a low RDS(on), fast switching speed, high voltage, and high current product. It is suitable for DC/DC converter and synchronous rectifier applications.

This datasheet is for FDB082N15A N-Channel PowerTrench® MOSFET. It has RDS(on) = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A, fast switching speed, low gate charge, high performance trench technology, extremely low RDS(on), high power and current handling capability, and is RoHS compliant.

FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench® MOSFET is a high performance MOSFET device produced by Fairchild Semiconductor Corporation. It has low RDS(on), low gate capacitance, high current handling capability and other features.

FDB070AN06A0 / FDP070AN06A0 is a N-Channel PowerTrench® MOSFET with an operating voltage of 60 V and current of 80 A. The typical on-resistance is 7mΩ.

This datasheet provides the characteristics of the FDB060AN08A0 / FDP060AN08A0 N-Channel PowerTrench® MOSFET, including rated voltage, rated current, on-resistance, gate-to-source voltage, and gate-to-source voltage.

This document describes the features and characteristics of the FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench® MOSFET product from Fairchild Semiconductor Corporation, including a drain-to-source voltage of 60V, a drain current of 80A, a drain-to-source resistance of 5mΩ, and a low Miller charge and QRR body diode.

The FDB047N10 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features low RDS(on), fast switching speed, low gate charge, and is used in DC to DC converters and synchronous rectification.

The PDF document is the datasheet of FDB039N06 N-Channel PowerTrench® MOSFET. This MOSFET features low on-state resistance, fast switching speed and low gate charge, and is suitable for applications such as DC/DC converters and synchronous rectifiers.

The FDB035N10A N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET produced by Fairchild Semiconductor Corporation. It has a RDS(on) of 3.0mΩ, an ID of 75A, a VDSS of 100V, a high switching speed and a low gate charge.