Fairchild Manuals

This document describes the FDC6312P dual P-channel 1.8V specified MOSFET produced by Fairchild Semiconductor. The product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance.

FDC6310P is a dual P-channel 2.5V specified MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance and low gate charge, and is suitable for applications such as load switches, battery protection and power management.

fdc6306p is a p-channel 2.5v specified mosfet produced by fairchild semiconductor. it uses fairchild semiconductor's advanced powertrench process, which has the characteristics of low on-state resistance and low gate charge. it is suitable for applications such as load switch, battery protection and power management.

FDC6305N is a dual N-channel 2.5V specified PowerTrench MOSFET from Fairchild Semiconductor, featuring low gate charge, high switching speed and extremely low RDS(ON).

This document describes the features and absolute maximum ratings of the FDC6304P digital FET, a dual P-channel transistor produced in July 1997. It includes parameters such as voltage, current, power dissipation, temperature, etc. The product is manufactured using high-density DMOS technology and has characteristics such as low voltage drive, low on-state resistance, ESD ruggedness, etc. It is suitable for battery-powered applications such as notebook computers and cellular phones.

FDC6303N is a dual N-channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It has very low on-state resistance. This device is specially designed for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required, this N-channel FET can replace several digital transistors with different bias resistors.

The FDC6302P is a Fairchild dual P-channel digital field-effect transistor with a maximum power dissipation of 0.9 watts and a temperature range of -55 to 150°C. The device is designed for low voltage applications and can be used to replace digital transistors in load switching applications.

FDC610PZ is a P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It features extremely low on-state resistance and low gate charge, making it ideal for battery power applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET is a high performance MOSFET manufactured by Fairchild Semiconductor. It is produced using the advanced PowerTrench process, and has low on-state resistance and low gate charge, making it suitable for battery power applications.

FDC606P is a P-channel MOSFET with a rated voltage of 1.8V, a maximum current of -6A, a maximum voltage of -12V, and a fast switching speed with extremely low RDS(ON).

This document describes the FDC604P P-Channel MOSFET, which uses Fairchild's low voltage PowerTrench process and is suitable for battery power management applications. It features -5.5A, -20V, fast switching speed, and extremely low RDS(ON).

This document describes the features and characteristics of the FDC602P P-Channel 2.5V PowerTrench MOSFET, which is suitable for battery management, load switch, and battery protection applications.

FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET is a 60V P-Channel MOSFET manufactured by Fairchild using Fairchild's high voltage PowerTrench process. This device has been optimized for power management applications.

The FDC5612 is a 60V N-Channel PowerTrench® MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.