The SS9012 is a PNP epitaxial silicon transistor with high total power dissipation, high collector current and excellent hFE linearity, it is suitable for 1W output amplifier of portable radios in Class B push-pull operation.
The document describes the Fairchild SS9012, a PNP epitaxial silicon transistor designed for use in portable radio output amplifiers. Key features include a high total power dissipation of 625mW and a high collector current of -500mA. It is noted as being complementary to the SS9013. This manual is written in Chinese.
| Collector-Base Voltage | -40 V |
|---|---|
| Collector-Emitter Voltage | -20 V |
| Emitter-Base Voltage | -5 V |
| Collector Current | -500 mA |
| Collector Power Dissipation | 625 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
The maximum collector current rating is -500 mA.
The device can dissipate up to 625 mW of power.
The maximum junction temperature is 150 °C.