This document provides the absolute maximum ratings and electrical characteristics of the PN2222 NPN Epitaxial Silicon Transistor. It includes the maximum values of voltage, current, power, and other parameters, as well as the test conditions and ranges for collector-base breakdown voltage, collector-emitter breakdown voltage, and emitter-base breakdown voltage. In addition, it provides the test conditions and ranges for DC current gain, saturation voltage, and bandwidth.
This document is a datasheet for the Fairchild Semiconductor PN2222, an NPN epitaxial silicon transistor. It provides absolute maximum ratings for parameters such as collector-base voltage, collector current, and power dissipation, along with electrical characteristics including breakdown voltages and current gain.
| Collector Power Dissipation | 625 mW |
|---|
The maximum collector current is 600 mA.
The maximum junction temperature is 150 °C.
The maximum collector power dissipation is 625 mW.