Fairchild Manuals

FDC365P P-Channel PowerTrench® MOSFET is a P-type MOSFET manufactured by Fairchild Semiconductor, with a maximum current of -4.3A and a maximum on-resistance of 55mΩ.

The FDC3612 is a 100V N-Channel PowerTrench MOSFET optimized for low gate charge, low RDS(ON) and fast switching speed, suitable for DC/DC converters.

FDC3535 is a P-Channel MOSFET produced by Fairchild with extremely low rDS(on), high power and current handling capability, and is widely used in load switch and synchronous rectifier applications.

The document is the datasheet of FDC2612.

This product is a 1.4A, 150V N-channel MOSFET that is optimized for low gate charge, low RDS(ON) and fast switching speed. It is suitable for DC/DC converter applications.

This document describes the features and characteristics of the FDB8896 N-Channel PowerTrench® MOSFET. The product is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON), and fast switching speed.

FDP8880 / FDB8880 is a N-Channel MOSFET from Fairchild Semiconductor Corporation. It features high performance trench technology for extremely low rDS(ON), low gate charge, high power and current handling capability, and is RoHS compliant.

FDB8860 N-Channel Logic Level PowerTrench® MOSFET is a low RDS(ON), low Qg(5) N-channel logic level power MOSFET with UIS capability, RoHS compliant.

FDB86135 N-Channel PowerTrench MOSFET is a high-performance N-channel MOSFET with fast switching speed, low gate charge, extremely low RDS(on), and high power and current handling capability.

FDB86102LZ is an N-Channel PowerTrench® MOSFET with a drain-to-source voltage of 100V, a drain current of 30A, and a maximum on-state resistance of 24mΩ. It features fast switching speed and very low total gate charge and gate-drain charge compared to competing trench technologies. It is suitable for applications such as DC-DC conversion, inverters, and synchronous rectifiers.

This document describes the features and characteristics of FDB8453LZ N-Channel PowerTrench® MOSFET, including maximum on-state resistance, ESD protection level, and fast switching.

This datasheet provides the specifications of the FDB8447L N-Channel PowerTrench® MOSFET.

The FDB8445 is a N-channel power MOSFET from Fairchild. Its typical on-resistance is 6.8mΩ and typical gate charge is 44nC.