This document describes the absolute maximum ratings and electrical characteristics of the SS9014 NPN epitaxial silicon transistor released by Fairchild Semiconductor Corporation in 2002. Its features include high total power dissipation, high hFE value, and good linearity.
The document is a technical datasheet for the Fairchild SS9014, an NPN epitaxial silicon transistor. It highlights key features such as high total power dissipation (PT=450mW), high hFE, and good linearity, making it suitable for pre-amplifier, low-level, and low-noise applications. This manual is written in Chinese.
| Collector-Base Voltage (VCBO) | 50 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 45 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 100 mA |
| Collector Power Dissipation (PC) | 450 mW |
| Junction Temperature (TJ) | 150 °C |
The SS9014 has a total power dissipation rating of 450 mW.
The transistor supports a collector current of up to 100 mA.
This device is available in the TO-92 package.