Fairchild Manuals

FJX1182 is a low frequency power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is -35V, maximum collector-emitter voltage is -30V, maximum emitter-base voltage is -5V, maximum collector current is -500mA, maximum collector power dissipation is 150mW, and maximum junction temperature is 150°C. The storage temperature range is -55~150°C.

FJX2222A — NPN Epitaxial Silicon Transistor is a 600 mA NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. It has a maximum collector-emitter voltage of 40V and a maximum collector power dissipation of 325 mW.

FJX2907A is a PNP type transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -60V, maximum collector-base voltage is -60V, maximum emitter-base voltage is -5V, maximum collector current is -600mA, maximum collector power dissipation is 325mW, and maximum storage temperature is 150°C.

FJX3904 is an NPN epitaxial silicon transistor used for general purposes. It has a collector-base voltage of 60V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. It also has a collector current of 200mA and collector power dissipation of 350mW.

This document describes the absolute maximum ratings and electrical characteristics of the FJX3906 PNP epitaxial silicon transistor. It provides the maximum rated values for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector power dissipation, and storage temperature. In addition, it provides the electrical characteristics for collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, current gain bandwidth product, output capacitance, noise figure, turn on time, and turn off time.

This document describes the absolute maximum ratings and electrical characteristics of the FJX733 PNP epitaxial silicon transistor, including voltage, current, power, etc. The transistor is suitable for low frequency amplifier applications.

FJX945 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. It has the characteristics of high collector-base voltage VCBO=60V and high current gain bandwidth product fT=300MHz (typ).

This product is a PNP audio frequency low noise amplifier with high voltage and high hFE.

This document is the FMB100 spec, which introduces the characteristics and parameters of the product

FMBA06 is a NPN multi-chip general purpose amplifier produced by Fairchild Semiconductor. Its absolute maximum ratings are: collector-emitter voltage is 80V, collector-base voltage is 80V, emitter-base voltage is 4.0V, collector current is 500mA, and working temperature range is -55 to +150°C.

FMBA14 is a NPN Multi-Chip Darlington Transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 30V, maximum collector-base voltage is 30V, maximum emitter-base voltage is 10V, maximum collector current is 1.2A, and operating temperature range is -55 to +150 degrees C.

FMBM5401 PNP General Purpose Amplifier is a product of Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is -150 V, the maximum collector-base voltage is -160 V, the maximum emitter-base voltage is -5.0 V, and the maximum collector current is -600 mA. The operating temperature range is -55 ~ 150 °C.

FMBM5551 NPN General Purpose Amplifier is a dual NPN transistor from Fairchild Semiconductor Corporation. Its maximum power dissipation is 350mW, maximum collector-emitter voltage is 160V, maximum collector-base voltage is 180V, maximum emitter-base voltage is 6V, maximum collector current is 600mA.

FMBS2383 is an NPN Epitaxial Silicon Transistor with Power Amplifier features. Its maximum collector-emitter voltage is 160V and maximum frequency gain bandwidth product is 120MHz.