Fairchild Manuals

The document describes the features and characteristics of the FCB11N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 650V voltage, 0.32Ω RDS(on), 40nC ultra-low gate charge, and 95pF low effective output capacitance.

FCA76N60N N-Channel MOSFET, is Fairchild's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. This product provides world class Rsp, superior switching performance and ruggedness.

FCA47N60F 600V N-Channel MOSFET, FRFET is a high performance new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance, suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET is a high performance MOSFET device from Fairchild with outstanding low on-resistance, ultra low gate charge and high voltage capability. This device is very suitable for various AC/DC power conversion applications for system miniaturization and higher efficiency.

This document describes the features and characteristics of the FCA36N60NF N-Channel MOSFET, FRFET product, including its low on-resistance, ultra-low gate charge, low output capacitance, 100% avalanche tested, etc. This product is suitable for AC-DC SMPS, PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

FCA35N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Corporation. It has a maximum breakdown voltage of 650V, a low on-resistance of 0.079Ω and a low output capacitance of 340pF.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's FCA20N60F 600V N-CHANNEL FRFET product, including 650V operating voltage, low on-resistance, fast recovery type, ultra low gate charge, low effective output capacitance, etc.

FCA16N60N N-Channel MOSFET is a high performance product from Fairchild Semiconductor Corporation. This product uses an advanced deep trench filling process and has ultra-low RDS(on), ultra-low gate charge, low effective output capacitance and other features.

This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ product manufactured by Fairchild Semiconductor Corporation.

FDB2552 / FDP2552 is a N-Channel PowerTrench® MOSFET with 150V, 37A and 36mΩ features. It features low Miller charge, low QRR body diode and UIS capability (single pulse and repetitive pulse).

FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ is a low-resistance power MOSFET produced by Fairchild Semiconductor Corporation. It has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features.

This document describes the features and characteristics of the FDH15N50 / FDP15N50 / FDB15N50 products, which are suitable for switch mode power supplies (SMPS). The products have features such as low gate charge, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced rDS(ON), reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.

This document describes the Fairchild Semiconductor Corporation's FDB150N10 N-Channel PowerTrench® MOSFET. The product has a rated voltage of 100V, a rated current of 57A, and an on-state resistance of 15mΩ. It is produced using advanced PowerTrench process to achieve lower on-state resistance and superior switching performance. It is suitable for applications such as DC to DC converters and synchronous rectification.