Fairchild Manuals

This user guide supports the FAN9611/12 400W evaluation board for interleaved boundary-conduction-mode power-factor-corrected supply. It should be used in conjunction with the FAN9611/12 datasheet as well as the Fairchild application note AN-6086 Design Considerations for Interleaved Boundary-Conduction Mode PFC Using FAN9611 / FAN9612. Although marked FAN9612, the evaluation board is functionally identical to the FAN9611.

This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter in the front end. The PWM controller can be used in either current mode or voltage mode for the downstream converter. In voltage mode, feed-forward from the PFC output bus can be used to improve the line transient response of PWM stage. In either mode, the PWM stage uses conventional trailing-edge duty cycle modulation, while the PFC uses leading-edge modulation. This proprietary leading/trailing-edge modulation technique can significantly reduce the ripple current of the PFC output capacitor. The synchronization of the PWM with the PFC simplifies the PWM compensation due to the controlled ripple on the PFC output capacitor (the PWM input capacitor). In addition to power factor correction, a number of protection features have been built in to the FAN480X. These include programmable soft-start, PFC over-voltage protection, pulse-by-pulse current limiting, brownout protection, and under-voltage lockout. FAN4801/2/2L feature programmable two-level PFC output to improve efficiency.

This application note describes the theory of operation and step-by-step design considerations for a power factor correction power supply using the FAN6982 controller

The FCP380N60 / FCPF380N60 is a N-Channel MOSFET from Fairchild Semiconductor Corporation that has a maximum rated voltage of 650V @TJ = 150°C, a maximum RDS(on) of 380mΩ, ultra low gate charge (typ. Qg = 30nC) and low effective output capacitance (typ. Coss.eff = 95pF).

The FCP36N60N N-Channel MOSFET is a 600V, 36A, 90mΩ SupreMOSTM MOSFET. It features RDS(on) = 81mΩ (Typ.)@ VGS = 10V, ID = 18A, ultra low gate charge (Typ. Qg = 86nC), low effective output capacitance and 100% avalanche tested.

FCP22N60N/FCPF22N60NT N-Channel MOSFET is a high voltage super-junction MOSFET with ultra low gate charge and low effective output capacitance, suitable for PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCP190N60 / FCPF190N60 N-Channel MOSFET is a 600V N-Channel MOSFET device from Fairchild Semiconductor Corporation. It has a maximum drain-source voltage of 600V and a maximum gate-source voltage of ±20V. The rated drain current is 20.2A, and the maximum drain current at 100°C is 12.7A. The device supports pulsed operation, with a maximum pulsed drain current of 60.6A. It also supports avalanche breakdown, with a maximum avalanche energy of 400mJ and a maximum avalanche current of 4A.

FCP16N60N/FCPF16N60NT N-Channel MOSFET is a 600V, 16A, 0.170Ω super low resistance power MOSFET.

FCP13N60N / FCPF13N60NT N-Channel MOSFET features RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A, Ultra Low Gate Charge ( Typ.Qg = 30.4nC), Low Effective Output Capacitance and 100% Avalanche Tested.

This document describes the features and characteristics of Fairchild's SupreMOS TM FCP11N60N / FCPF11N60NT N-Channel MOSFET, including maximum voltage, maximum current, low resistance, etc.

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET is a high-performance MOSFET from Fairchild Semiconductor Corporation. It features low on-resistance (Typ. RDS(on) = 0.32Ω), fast recovery time (trr = 120ns), ultra low gate charge (typ. Qg = 40nC), low effective output capacitance (typ. Cosseff.=95pF), and is very suitable for various AC/DC power conversion.

FCI7N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Semiconductor, which utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This document introduces the characteristics of the FCI25N60N_F102 MOSFET, including the minimum on-resistance, ultra-low gate charge, and low effective output capacitance.