This product is a dual N-channel power transistor designed specifically for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
The FDMA1028NZ is a dual N-Channel PowerTrench MOSFET designed specifically as a single package solution for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.
| Pulsed Drain Current | 6 A |
|---|---|
| Operating Junction Temperature Range | -55 to +150 °C |
The device uses the MicroFET 2x2 package.
Yes, the device is RoHS compliant and free from halogenated compounds and antimony.
The device has an HBM ESD protection level greater than 2kV.
The operating and storage junction temperature range is -55 to +150 °C.