FDMA291P is a P-Channel 1.8V PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It is mainly used for battery charging or load switching applications. It features low on-state resistance.
The FDMA291P is a Single P-Channel 1.8V Specified PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features low on-state resistance and is specifically designed for battery charge or load switching in cellular handsets and other ultra-portable applications.
The device utilizes the MicroFET 2x2 package, which offers exceptional thermal performance for its physical size with a maximum profile of 0.8 mm. The datasheet provides absolute maximum ratings, electrical characteristics including off and on-state parameters, dynamic switching characteristics, and typical performance curves.
| Drain-Source Voltage (VDS) | -20 V |
|---|---|
| Gate-Source Voltage (VGS) | +8 V |
| Pulsed Drain Current | -24 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | MicroFET 2x2 |
It is designed specifically for battery charge or load switching in cellular handset and other ultra-portable applications.
The MicroFET 2x2 package has a low profile with a maximum height of 0.8 mm.
Yes, the device is free from halogenated compounds and antimony oxides and is RoHS Compliant.