This product is a dual P-channel MOSFET with a maximum on-state resistance of 155mΩ, a maximum drain-source voltage of -20V, and a maximum drain current of -3.1A.
The FDMA1025P is a dual P-Channel MOSFET designed as a single package solution for battery charge switches in cellular handsets and other ultra-portable applications. It features two independent MOSFETs with low on-state resistance to minimize conduction losses and supports bi-directional current flow in a common source configuration.
The device is housed in a MicroFET 2x2 package, offering a low profile of 0.8mm maximum and exceptional thermal performance for its size. It is RoHS compliant and free from halogenated compounds and antimony oxides. The datasheet provides detailed electrical characteristics, thermal resistance data, and application information for DC-DC conversion.
| Drain Current (Continuous) | -3.1 A |
|---|---|
| Power Dissipation (Single) | 14 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | MicroFET 2x2 |
The maximum continuous drain current is -3.1 A.
Yes, the device is RoHS compliant and free from halogenated compounds and antimony oxides.