Fairchild Semiconductor FDMA2002NZ Dual N-Channel PowerTrench MOSFET Datasheet

FDMA2002NZ is a dual N-Channel PowerTrench MOSFET with an operating voltage of 30V and an operating current of 2.9A. It features low on-state resistance and is suitable for dual switching requirements in cellular handsets and other ultra-portable applications.


Fairchild Semiconductor FDMA2002NZ Dual N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
303 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
DAC6A40067602C939774650D4035BE7C

About this manual

The FDMA2002NZ is a dual N-channel PowerTrench MOSFET designed specifically as a single package solution for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-channel MOSFETs with low on-state resistance to minimize conduction losses and is well-suited for linear mode applications.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Typical Characteristics
  • Dimensional Outline
  • Package Marking

Specifications

ESD Protection Level1.8kV

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at a gate-source voltage of 4.5 V?

The device supports a continuous drain current of 2.9 A when the junction temperature is 25°C and the gate-source voltage is 4.5 V.

What are the operating and storage temperature limits for this component?

The MOSFET is rated for operation and storage between -55°C and +150°C.

What is the maximum height of this package?

The device has a low profile with a maximum height of 0.8 mm.

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