Fairchild Semiconductor FDMA3023PZ Dual P-Channel MOSFET Datasheet

This document describes the features and characteristics of the FDMA3023PZ Dual P-Channel PowerTrench MOSFET, including maximum on-state resistance and low conduction losses.


Fairchild Semiconductor FDMA3023PZ Dual P-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
325 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
2E1794D092D8AC533DD1D68186BDB112

About this manual

The FDMA3023PZ is a dual P-Channel MOSFET featuring two independent devices with low on-state resistance, specifically designed as a single package solution for battery charge switches in cellular handsets and other ultra-portable applications. When connected in a common source configuration, the device supports bi-directional current flow.

What's inside

  • Features
  • General Description
  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Typical Characteristics
  • Package Marking and Ordering Information

Specifications

Package TypeMicroFET 2X2

Frequently asked questions

What is the maximum continuous drain current for this MOSFET?

The device supports a maximum continuous drain current of -2.9 A.

What is the maximum power dissipation for single operation?

The maximum power dissipation is 1.4 W when mounted on a 1 in² pad of 2 oz copper.

What are the operating and storage junction temperature limits?

The device operates and stores within a range of -55 to +150 °C.

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