Fairchild Manuals

This is a product introduction document about QFET technology. It introduces the features and characteristics of QFET technology, as well as the application of this technology in electronic products.

FQP30N06L is a 60V logic N-channel MOSFET produced by Fairchild. This product has 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V, low gate charge (typical 15 nC), low Crss (typical 50 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

This document describes the features and characteristics of the FQP32N20C/FQPF32N20C N-Channel enhancement mode power field effect transistors. These transistors are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse. They are suitable for high efficiency switching DC/DC converters, switch mode power supplies, uninterrupted power supplies, and motor controls.

A technical document about QFET device technology and QFET device applications

This document introduces the QFET (Qualified Field Engineering Technicians) training program. The QFET training program is designed to help engineers improve their technical skills and knowledge. The program provides engineers with a learning environment in which they can acquire the necessary knowledge and skills to succeed in their careers.

This document describes the features and characteristics of the FQP3N60C 600V N-Channel MOSFET, including 3A current, low gate charge, fast switching, 100% avalanche tested, etc.

FQP3N80C/FQPF3N80C is a 800V N-Channel MOSFET manufactured by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching speed, high energy pulse resistance and improved dv/dt capability.

This document describes the features and characteristics of FQP3P20 200V P-Channel MOSFET, including low on-state resistance, fast switching, high energy pulse withstand, and suitability for high efficiency switching DC/DC converters.

This document describes the features and characteristics of the FQP3P50 500V P-Channel MOSFET product produced by Fairchild, including low on-state resistance, fast switching, and high energy pulse withstand capability.

The FQP44N10 is a 43.5A, 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has a low on-state resistance, superior switching performance and the ability to withstand high energy pulses in the avalanche and commutation modes. This device is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.

This document describes the features and characteristics of the FQP45N15V2/FQPF45N15V2 N-Channel enhancement mode power field effect transistors, including low on-state resistance, superior switching performance, and the ability to withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, synchronous rectification, and other applications where low Rds(on) is required.

QFET QFET QFET QFET is a high-performance power device produced by Philips. It uses advanced process technology and has the characteristics of high voltage, high current and low power consumption. It is widely used in industrial, automotive, consumer electronics and other fields.