Fairchild Manuals

This is a product manual that introduces the features of FQD2N60C/FQU2N60C, including RDS(on) = 4.7Ω @VGS = 10 V, low gate charge (typical 8.5 nC), low Crss (typical 4.3 pF), fast switching, 100% avalanche tested, improved dv/dt capability, etc.

FQD20N06 / FQU20N06 60V N-Channel MOSFET is a high-performance power field effect transistor from Fairchild with low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability, suitable for low-voltage applications such as automotive, DC/DC converters

This document describes the FQD1N80 / FQU1N80 800V N-Channel MOSFET products, which are produced using Fairchild's proprietary technology. The products feature low on-state resistance, superior switching performance, and high energy pulse withstand capability, making them well suited for high efficiency switch mode power supplies.

FQP17P06 is a P-channel MOSFET with 60V breakdown voltage, produced using Fairchild's proprietary planar stripe DMOS technology. It has the advantages of low on-state resistance, fast switching and high energy pulse withstand. It is suitable for low voltage applications such as automotive, DC/DC converters

FQP17P10 is a 100V P-Channel MOSFET manufactured by Fairchild Semiconductor with low gate charge, low Crss and fast switching.

The document introduces the features and characteristics of the QFET product

This document describes the features and characteristics of the FQP19N20C/FQPF19N20C QFET® 200V N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.

This document describes the FQP20N06 60V N-Channel MOSFET, which is manufactured using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document describes the FQP20N06L 60V logic N-channel MOSFET product. The product is manufactured using Fairchild's proprietary technology, featuring low on-state resistance, superior switching performance, and durability under high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

The document introduces the characteristics of QFET, including brand, model and other information

The FQP24N08 is an 80V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It offers low on-state resistance, superior switching performance, and withstand high energy pulses in avalanche and commutation mode. It is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

This document introduces the product characteristics of the QFET QFET QFET QFET series, including product overview, functional characteristics, application scenarios, etc.

This document describes the features and characteristics of the FQP27P06 60V P-Channel MOSFET product. It is produced using Fairchild's DMOS technology and has features such as low on-state resistance, fast switching, and high energy pulse withstand capability. It is suitable for low voltage applications.

FQP2N60C/FQPF2N60C is a 2.0A, 600V N-Channel MOSFET produced by Fairchild. It has features such as low RDS(on), low gate charge and low Crss, and is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.