The FDMC86320 N-Channel Power Trench® MOSFET is a N-channel MOSFET from Fairchild Semiconductor Corporation. This device features low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance, and is suitable for applications such as DC/DC converters, motor bridge switches and synchronous rectifiers
This document is a technical datasheet for the Fairchild Semiconductor FDMC86320, an N-Channel Power Trench MOSFET. The device features an 80V drain-to-source voltage rating and a continuous drain current of 22A (package limited). It is optimized for low gate charge and fast switching speed to improve efficiency in DC/DC converters.
| Drain to Source Voltage (Vdss) | 80 V |
|---|---|
| Continuous Drain Current (Package limited) | 22 A |
| Static Drain to Source On Resistance | 11.7 mΩ |
| Power Dissipation (Ta = 25 °C) | 2.3 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device is designed for use as a Primary DC-DC Switch, Motor Bridge Switch, and Synchronous Rectifier.
Yes, the datasheet states that the device is RoHS Compliant.