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FQP47P06 is a 60V P-channel MOSFET from Fairchild Semiconductor. It features low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
This document describes the features and characteristics of the FQP4N80 QFET TM FQP4N80 800V N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching, etc. It is suitable for high efficiency switch mode power supplies.
The FQP4P40 is a 400V P-Channel MOSFET produced by Fairchild Semiconductor. This device has -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V, low gate charge (typical 18 nC), low Crss (typical 11 pF), fast switching, 100% avalanche tested and improved dv/dt capability.
FQP50N06L is a 60V logic N-channel MOSFET produced by Fairchild, with the characteristics of low on-state resistance, fast switching and 175°C maximum junction temperature
FQP55N10 is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
This document describes the features and characteristics of the FQP5N60C/FQPF5N60C 600V N-Channel MOSFET. These devices are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
FQP65N06 60V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This product uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQP6N40C/FQPF6N40C is a 400V N-channel MOSFET produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
This datasheet introduces FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET features, including rated voltage, maximum current, gate voltage, switching speed, etc.
This document describes the features and characteristics of the FQP6N80C/FQPF6N80C, an 800V N-Channel MOSFET product. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulses. This product is suitable for high efficiency switch mode power supplies.
The FQP6N90C/FQPF6N90C is a 900V N-channel MOSFET produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high-energy pulse handling.
FQP70N10 is a N-channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor International using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
This document describes the 800V N-Channel MOSFET products, FQP7N80C/FQPF7N80C. These products are produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are well suited for high efficiency switch mode power supplies.
This document describes the features and characteristics of the FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse withstand capability.
