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The FDMS8320L N-Channel PowerTrench® MOSFET has low rDS(on) and high efficiency, which is suitable for OringFET / Load Switching, Synchronous Rectification and DC-DC Conversion Power applications
FDMS8460 N-Channel Power Trench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. It features a low on-state resistance of only 2.2mΩ. It is suitable for DC-DC conversion applications.
The FDMS8558S N-Channel PowerTrench® SyncFETTM is a high-performance N-channel MOSFET with extremely low on-resistance and a monolithic Schottky body diode.
FDMS8558SDC N-Channel PowerTrench® SyncFETTM is a low-impedance N-channel synchronous rectifier that uses Fairchild Semiconductor's advanced PowerTrench® process to achieve the highest conversion efficiency at extremely low junction temperatures.
FDMS8570S N-Channel PowerTrench® SyncFETTM is a high performance power device produced using Fairchild Semiconductor's advanced PowerTrench® process. This device has extremely low Rds(on) and is suitable for DC/DC converters, telecom secondary side rectification and high end server/workstation applications.
The FDMS3626S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET is a dual PQFN package N-channel MOSFET with low on-resistance and high power efficiency. It is suitable for computing, communications, general purpose point of load and notebook PC applications.
FDMS3662 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor Corporation. It has a rated voltage of 100V and a rated current of 49A. Its rated on-state resistance is 14.8mΩ. The MOSFET has low on-state resistance, MSL1 robust package, 100% UIL tested, RoHS compliant, etc.
FDMS3664S PowerTrench® Power Stage is a dual N-Channel MOSFET with low inductance packaging, excellent switching performance and energy saving characteristics.
FDMS3622S is a 25V Asymmetric Dual N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This product has low on-resistance, low inductance packaging, optimized layout and RoHS compliance.
FDMS3620S PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET is a low inductance package MOSFET with enhanced switching performance. It is suitable for computing, communications, power and notebook applications.
The FDMS3615S PowerTrench® Power Stage is a 25V Asymmetric Dual N-Channel MOSFET with low on-resistance. It is suitable for applications such as notebooks and servers.
The FDMS3606AS is a 30V asymmetric dual N-channel MOSFET with low inductance packaging, lower switching losses, and reduced circuit inductance. It is suitable for applications such as computing, communications, general purpose point of load, notebook VCORE, and server MOSFET.
