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FQA9P25 is a 250V P-Channel MOSFET produced by Fairchild. Its features include low RDS(on), low gate charge, low Crss, fast switching, and 100% avalanche testing.
The FQA9N90C_F109 900V N-Channel MOSFET is a power field effect transistor with low gate charge, low on-state resistance and fast switching characteristics. It is suitable for high-efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
QFET QFET QFET QFET is a new generation of high performance, high density and high efficiency silicon carbide power device launched by Intel Corporation. This device uses Intel's unique silicon carbide substrate technology, which has a very high critical breakdown voltage and a very low on-resistance, and also has excellent thermal shock and thermal cycling characteristics, which can meet the harsh requirements of high power and high density applications.
This document introduces the features and characteristics of QFET products, including QFET's structure principle, working principle, application scenarios, etc.
This document describes the features and characteristics of the FQP13N50/FQPF13N50 500V N-Channel MOSFET products, which are produced using Fairchild's proprietary DMOS technology. These products have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge.
The FQP13N10L 100V LOGIC N-Channel MOSFET is a high performance MOSFET device produced by Fairchild. It features low RDS(on), low gate charge, low Crss, fast switching, etc. It is suitable for applications such as high efficiency switching DC/DC converters and DC motor control.
FQP13N10 is a 100V N-channel MOSFET from Fairchild with low on-state resistance, fast switching, 100% avalanche tested, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control
FQP13N06L is a 60V logic N-channel MOSFET manufactured by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance, and is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQP11N40C/FQPF11N40C 400V N-Channel MOSFET is a low RDS(on), high voltage N-channel MOSFET manufactured by Fairchild that can be used in high-efficiency switched mode power supplies, active power factor correction, and half-bridge topology electronic lamp ballasts.
This document is the datasheet of FQNL2N50B 500V N-Channel MOSFET, which introduces the features and characteristics of this device, including rated working voltage, current, gate voltage, gate capacitance, etc.
FQN1N60C is a 600V N-channel MOSFET with features such as 0.3A, 600V, RDS(on) = 11.5 Ω @ VGS = 10V, low gate charge (typical 4.8 nC), low Crss (typical 3.5pF), fast switching and 100% avalanche tested.
FQN1N50C is a 500V N-channel MOSFET with features of low RDS(on), low gate charge and fast switching, suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
