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FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation using Fairchild Semiconductor's advanced Power Trench® process. It has the lowest RDS(on) and excellent switching performance, which is suitable for DC/DC converter synchronous rectifier, telecommunications secondary side rectifier and high end server/workstation.
The FDMS86500L N-Channel PowerTrench® MOSFET is a low on-resistance, high performance N-channel MOSFET, designed for a variety of DC/DC converter applications.
This document describes the features and characteristics of the FDMS86520 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, 100% UIL testing, etc.
FDMS86520L N-Channel PowerTrench® MOSFET is a low rDS(on) MOSFET introduced by Fairchild Semiconductor Corporation in 2011. The device is designed for DC/DC converters and comes in an MSL1 package with 100% UIL testing and RoHS compliance.
FDMS86540 is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This device has the characteristics of low on-resistance, high efficiency, soft recovery, and is suitable for use in DC/DC converters.
FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5m� is a MOSFET device produced by Fairchild Semiconductor Corporation. It has low rDS(on) and high efficiency.
FDMS8848NZ N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency device launched by Fairchild Semiconductor Corporation, with a maximum current of 49A and a maximum resistance of 3.1 mOhm
The FDMS8880 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a minimum on-resistance of 8.5 mΩ, making it suitable for synchronous buck applications in notebooks.
This document describes an N-Channel PowerTrench MOSFET with a voltage rating of 30V, current rating of 21A, and maximum on-resistance of 9.5 mΩ. It features advanced packaging and silicon technology for low on-resistance and high efficiency. The MOSFET is suitable for applications such as synchronous buck converters for notebook Vcore and server, notebook battery packs, and load switches.
The FDMS9600S is a dual N-Channel PowerTrench® MOSFET. It is a 30V, 32A, 8.5mΩ MOSFET with low Qg high side MOSFET and low rDS(on) low side MOSFET. It has thermally efficient, dual Power56 package, pinout optimized, RoHS compliant etc.
This document describes the features and characteristics of the FDMS9620S Dual N-Channel PowerTrench® MOSFET, released in July 2007. It includes parameters such as current, resistance, and power for both Q1 and Q2 models.
The FDN302P is a P-channel 2.5V specified MOSFET from Fairchild Semiconductor Corporation. It is optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
FDN304P is a P-channel MOSFET with a nominal voltage of 1.8V and uses Fairchild's advanced low voltage PowerTrench process. It features fast switching speed and extremely low RDS(ON).
This document describes a P-channel 1.8V specified MOSFET that uses Fairchild's advanced low voltage PowerTrench process. It is optimized for battery power management applications.
FDN306P is a P-Channel 1.8V specified MOSFET from Fairchild. It has extremely low RDS(ON) and operates at -2.6A, -12V. It also has a fast switching speed.
