Fairchild Manuals

FQL40N50F is an N-channel MOSFET produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-resistance, high switching speed and high dv/dt capability.

The FQL40N50 is a 500V N-channel MOSFET manufactured by Fairchild with a continuous current of 40A and a 0.11 Ohm on-state resistance.

This data sheet provides the product specifications of FQB4N90 / FQI4N90, including pin definition, package, maximum working voltage, maximum working current, switching speed, gate leakage and other parameters.

This document introduces the features and characteristics of the QFET product, which can be used for digital control of circuits.

This document describes the features and characteristics of the FQB13N50C/FQI13N50C 500V N-Channel MOSFET. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode.

FQH8N100C is a 1000V N-channel MOSFET produced by Fairchild. It has a current of 8A, a RDS(on) of 1.45Ω @VGS = 10 V, low gate charge (typical 53nC) and Crss (typical 16pF), fast switching, 100% avalanche tested and improved dv/dt capability.

This document describes the features and characteristics of the FQH44N10_F133 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The transistor is created using advanced DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulse in avalanche and commutation mode. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

QFET is a new type of RF power device with high frequency, high power, high efficiency, high reliability and low cost. QFET has broad application in RF communication, radar, electronic countermeasure, satellite communication, microwave heating and other fields.

This document describes the features and characteristics of the FQD8P10 / FQU8P10 100V P-Channel MOSFET. These transistors are produced using Fairchild's proprietary planar stripe DMOS technology, which provides low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

This document describes the features and characteristics of QFET products.

This document introduces the QFET TM FQD7P06 / FQU7P06 60V P-Channel MOSFET released by Fairchild Semiconductor Corporation in May 2001. These products are produced using Fairchild's proprietary technology, with features of low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document introduces the features and advantages of QFET

The FQD7N20L/FQU7N20L 200V LOGIC N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor International. It has excellent switching performance, low on-state resistance, low gate charge and low Crss. It is suitable for high-efficiency switching DC/DC converters, switch mode power supplies and motor control applications.

FDQ7N10L / FQU7N10L is a N-Channel MOSFET from Fairchild. The device is rated at 100V and can handle a maximum current of 5.8A. The on-state resistance is 0.35 ohms.

FQD6N50C / FQU6N50C is a 500V N-Channel MOSFET from Fairchild Semiconductor Corporation. Its features are: 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V, low gate charge (typical 19nC), low Crss (typical 15pF), fast switching, 100% avalanche tested, improved dv/dt capability.