FDN306P is a P-Channel 1.8V specified MOSFET from Fairchild. It has extremely low RDS(ON) and operates at -2.6A, -12V. It also has a fast switching speed.
This document is a datasheet for the FDN306P, a P-Channel MOSFET utilizing Fairchild's advanced low voltage PowerTrench process. The device is specifically optimized for battery power management applications, including battery management, load switching, and battery protection. It features a SuperSOT-3 package designed to provide low on-resistance and higher power handling capability compared to standard SOT23 packages in the same footprint.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a drain-source voltage of -12V, a maximum continuous drain current of -2.6A, and a maximum power dissipation of 0.5W. It also details thermal characteristics, switching times, and capacitance values at various operating conditions.
| Drain-Source Voltage | -12 V |
|---|---|
| Gate-Source Voltage | ±8 V |
| Continuous Drain Current | -2.6 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Junction Temperature | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient | 250 °C/W |
| Thermal Resistance Junction-to-Case | 75 °C/W |
The device is optimized for battery power management applications.
The listed applications are battery management, load switch, and battery protection.
The maximum continuous drain current is -2.6 A.