The FDN302P is a P-channel 2.5V specified MOSFET from Fairchild Semiconductor Corporation. It is optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
The document describes the Fairchild Semiconductor FDN302P, a P-Channel MOSFET optimized for power management applications such as load switches and battery protection. It utilizes the company's advanced PowerTrench process and is housed in a SuperSOT™-3 package.
Key features include a specified gate drive voltage range of 2.5V to 12V, with absolute maximum ratings of -20V drain-source voltage and -2.4A continuous drain current. The device offers fast switching speeds and low on-resistance characteristics.
| Drain-Source Voltage (V_BSS) | -20 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is optimized for a wide range of gate drive voltages from 2.5V to 12V.
The device uses the SuperSOT™-3 package.