Fairchild Manuals

This document is a product specification for a certain brand of product, which introduces the product's features and usage methods.

This document is a datasheet for N-Channel enhancement mode power field effect transistors

This document describes the features and characteristics of the FQB33N10 / FQI33N10, a 100V N-Channel MOSFET. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulse in avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

FQB30N06L / FQI30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device has 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V, low gate charge (typical 15 nC), low Crss (typical 50 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

The FQB27P06 / FQI27P06 is a 60V P-channel MOSFET produced by Fairchild, which has low gate charge, low Crss, fast switching, etc. It is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.

This datasheet introduces the features and characteristics of FQB22P10 / FQI22P10 P-channel MOSFET devices.

This product is a high-performance power electronic measurement instrument with multiple input channels, wide measurement range, strong measurement functions, strong data processing capabilities, clear data display, simple operation, strong anti-interference ability and convenient use, which is widely used in the power system, electronic communication system, industrial control system and other industries for power electronic device testing, testing, fault diagnosis, analysis and maintenance.

200V N-Channel MOSFET, features low gate charge, low input capacitance, high switching speed, 100% avalanche tested, improved dv/dt capability.

The document describes the features and characteristics of the products.

FQI12P20 is a 200V P-Channel MOSFET with low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability

This document provides the characteristics of FQB11P06 / FQI11P06 60V P-Channel MOSFET, including technology principle, application scenarios, performance parameters, etc.

This document is a summary of QFET products, introducing the features and characteristics of QFET products, including product brands, models, names and other information.

FQAF13N80 is an N-channel enhancement mode power field effect transistor from Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the advantages of low on-state resistance, high switching performance and high energy pulse endurance. It is suitable for high efficiency switch mode power supplies.

FQAF11N90C is a N-Channel MOSFET produced by Fairchild Corporation. Its main features are low resistance, high switching performance and high energy pulse, suitable for high efficiency switch mode power supplies.