Fairchild Manuals

FQD19N10 / FQU19N10 100V N-Channel MOSFET is a high performance switching device manufactured by Fairchild Semiconductor International, with low on-state resistance, high frequency switching capability, small gate capacitance, etc., suitable for audio amplifiers, high efficiency switching DC/DC converters and DC motor control and other low voltage applications.

This document describes the features and characteristics of the FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It uses advanced DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications, automotive, high efficiency DC/DC converters, and DC motor control.

FQD17P06 / FQU17P06 is a 60V P-Channel MOSFET produced by Fairchild with excellent switching performance and low on-state resistance.

The FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET is an enhancement mode power field effect transistor produced by Fairchild. It has the advantages of low on-state resistance, excellent switching performance and high energy pulse resistance. It is suitable for low-voltage applications such as automobiles, DC/DC converters and DC motor control.

This document describes the features and characteristics of the FQD16N25C 250V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 16A current, 0.27Ω RDS(on), low gate charge and low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability.

This product is a N-Channel MOSFET with model FQD13N10 / FQU13N10. It is produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching speed, and is suitable for low voltage applications such as audio amplifier, DC/DC converter, and DC motor control.

This document describes the features and characteristics of the FQD13N06L / FQU13N06L 60V logic N-channel MOSFET products. These products are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. They are well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

The FQD13N06 / FQU13N06 is a N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

This document describes the features and characteristics of the FQD12N20L / FQU12N20L 200V logic N-channel MOSFETs, including low on-state resistance, fast switching performance, and high energy pulse withstand capability. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, motor control, and other applications.

This document describes the features and characteristics of products from a certain brand.

This product is a P-channel enhancement mode power field effect transistor with low on-state resistance and fast switching.

This is a PDF document about FQD10N20C / FQU10N20C 200V N-Channel MOSFET. The document describes the features and characteristics of these N-Channel enhancement mode power field effect transistors, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.

FQB9N50C/FQI9N50C is a 500V N-Channel MOSFET produced by Fairchild Corporation. It has low on-state resistance and high switching speed. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.