The FDS6990AS is a dual N-channel power MOSFET from Fairchild Semiconductor. It has a maximum current of 7.5A, a maximum voltage of 30V, a typical on-resistance of 22mOhm, and a typical gate capacitance of 10nC. It is suitable for applications such as DC/DC converters and motor drives.
The document describes the Fairchild FDS6990AS, which is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. It utilizes Fairchild's monolithic SyncFET technology to maximize power conversion efficiency by providing low on-resistance and low gate charge.
Key features include high power and current handling capability, a typical total gate charge of 10nC, and the ability to function as a low-side switch in synchronous rectifier applications. The device is suitable for use in DC/DC converters and motor drives.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Pulsed Drain Current (Id) | 20 A |
| Power Dissipation for Dual Operation | 2 W |
The FDS6990AS can handle a continuous drain current of 7.5 A.
The device dissipates a maximum of 2 W during dual operation.