TEKT5400S is a high-sensitive silicon NPN epitaxial planar phototransistor from Vishay Semiconductors. It is packaged in a flat side view plastic package with a small recessed lens, providing high sensitivity in a low-profile case.
The TEKT5400S is a high‑sensitivity silicon NPN epitaxial planar phototransistor in a flat side‑view plastic package. It features a recessed lens, built‑in IR filter matched to emitters >850 nm, and an angle of half sensitivity of –37°.
The datasheet lists absolute maximum ratings such as VCEO 70 V, IC 100 mA, peak collector current 200 mA, total power dissipation 150 mW, and junction temperature 100 °C. Typical characteristics include wavelength of peak sensitivity 920 nm, turn‑on time 6 µs, turn‑off time 5 µs, and dimensions in millimetres. The device is intended for detector applications in electronic control and drive circuits. This manual is written in Chinese.
| Collector‑Emitter Voltage (VCEO) | 70 V |
|---|---|
| Collector Current (IC) | 100 mA |
| Peak Collector Current | 200 mA |
| Junction Temperature (Tj) | 100 °C |
| Wavelength of Peak Sensitivity (λp) | 920 nm |
| Angle of Half Sensitivity (ϕ) | –37° |
The maximum collector current is 100 mA.
The peak collector current rating is 200 mA.
The peak sensitivity wavelength is 920 nm.
The angle of half sensitivity is –37°.