This datasheet introduces the ISSI IS41C16100 and IS41LV16100, which are 1,048,576 x 16-bit high-performance CMOS dynamic random access memories. They offer an accelerated cycle access mode called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The upper and lower byte byte write control makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems. These features make the IS41C16100 and IS41LV16100 ideally suited for high-performance, high-bandwidth, high data throughput applications.