The ISSI IS41LV8200A is a 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory with Extended Data-Out (EDO) Page Mode access cycle. These devices offer TTL compatible inputs and outputs, a refresh interval of 2,048 cycles/32 ms, and refresh modes including RAS-Only, CAS-before-RAS (CBR), and Hidden. It operates on a single power supply of 3.3V ± 10% and supports byte write and byte read operations via two CAS signals. The IS41LV8200A is suitable for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The ISSI IS41LV8200A is a 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory (DRAM) optimized for high-speed bandwidth and low power applications. It features Extended Data-Out (EDO) Page Mode access, allowing 2,048 random accesses within a single row with a cycle time as short as 20 ns per 4-bit word. The device is packaged in a 28-pin 300-mil SOJ with JEDEC standard pinouts and is ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
| Memory Capacity | 2,097,152 x 8-bit |
|---|---|
| Access Mode | EDO Page Mode |
| Refresh Interval | 2,048 cycles/32 ms |
| Refresh Modes | RAS-Only, CAS-before-RAS, Hidden |
| Power Supply | 3.3V ± 10% |
| Operating Temperature | -55 to +125 °C |
| Input Leakage Current | -5 to 5 µA |
| Random READ or WRITE Cycle Time (-50) | 85 ns |
| EDO Page Mode Cycle Time (-50) | 20 ns |
The device requires 2,048 refresh cycles in each 32 ms period.
The supported modes are RAS-Only, CAS-before-RAS (CBR), and Hidden.
Yes, the device features TTL compatible inputs and outputs.
The EDO Page Mode cycle time is 20 ns for -50 grade and 25 ns for -60 grade.