This document mainly introduces the features of ISSI IS61LV256AL, including high-speed access time, automatic power-down, low power consumption, TTL compatible interface levels, single 3.3V power supply, full static operation, three-state outputs, etc.
The ISSI IS62WV25616ALL/IS62WV25616BLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
ISSI IS61LV5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. It has high clock speed, high reliability and low power consumption.
ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields higher performance and low power consumption devices. The product features high-speed access time, low power consumption, and ease of application.
IS63LV1024 is a 128K x 8 high-performance CMOS static RAM with 3.3V revolutionary pinout. It is fabricated using ISSI's high-performance CMOS technology, which provides high reliability and low power consumption. When CE is HIGH, the device enters a standby mode with a power dissipation of 250µW.
This document is the IS25C01 specification, which introduces the features and characteristics of IS25C01, including low voltage operation, low power consumption, electrically erasable, SPI compatible, etc.
ISSI's 9 Meg NLP/NVP product family is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, 'no wait' state, low-power solution.
IS80LV51 IS80LV31 are high-performance microcontrollers fabricated using high-density CMOS technology and are functionally compatible with the industry standard 80C51 microcontrollers.
The ISSI IS61C256AH is a high-performance, low-power 32K x 8 SRAM. It uses ISSI's high-performance CMOS process and has a maximum access time of 10ns. In standby mode, the power consumption can be reduced to 250µW (typical) with CMOS input levels.
