ISSI IS41C16105 and IS41LV16105 are 1048576×16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41C16105 and IS41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400-mil SOJ and 400-mil 44-(50-) pin TSOP (Type II).
The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices support TTL compatible inputs and outputs, tristate I/O, and multiple refresh modes including RAS-Only, CAS-before-RAS (CBR), and Hidden. They feature a single power supply of either 5V for the IS41C16105 or 3.3V for the IS41LV16105. This manual is written in Chinese.
| Memory Capacity | 1,048,576 x 16-bit |
|---|---|
| Refresh Interval | 1,024 cycles/16 ms |
| Power Supply Voltage (IS41C16105) | 5V ± 10% |
| Operating Temperature Range | -30°C to +85°C |
| Package Types | 42-pin SOJ and 44(50)-pin TSOP (Type II) |
The device supports RAS-Only, CAS-before-RAS (CBR), and Hidden refresh modes.
Yes, it supports Byte Write and Byte Read operation via two CAS controls.