The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory with accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word. These features make the IS41C4100 and IS41LV4100 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.