The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory with accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word. These features make the IS41C4100 and IS41LV4100 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
This document provides preliminary technical data for the ISSI IS41C4100 and IS41LV4100, which are high-performance 1Meg x 4-bit CMOS Dynamic Random Access Memories. These devices feature EDO Page Mode capabilities allowing up to 512 random accesses within a single row with access cycle times as short as 10ns per 4-bit word.
| Memory Capacity | 1Meg x 4-bit (1,048,576 x 4) |
|---|---|
| Package Type | 20-pin SOJ |
| Supply Voltage (IS41C4100) | 5V ± 10% |
| Supply Voltage (IS41LV4100) | 3.3V ± 10% |
| Operating Temperature Range | -40°C to +85°C |
| Max. RAS Access Time (-35) | 35 ns |
| Max. CAS Access Time (-60) | 15 ns |
The devices require a refresh interval of 1024 cycles per 16 ms period.
The products support RAS-Only, CAS-before-RAS (CBR), and Hidden refresh modes.
Yes, the device features TTL compatible inputs and outputs.