The ISSI 4405x Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the 4405x Series ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The 4405x Series is packaged in a 24-pin 300-mil SOJ with JEDEC standard pinouts.
This document is a technical datasheet for the ISSI 4405x Series, which includes part numbers IS41C4405X and IS41LV4405X. These are 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory (DRAM) devices optimized for high-speed bandwidth and low power applications.
| Memory Capacity | 4,194,304 x 4-bit (16-MBIT) |
|---|---|
| Operating Voltage | 5V ±10% or 3.3V ±10% |
| Operating Temperature (Industrial) | -40°C to +85°C |
| Package Type | 24-pin 300-mil SOJ |
| Refresh Interval (2K) | 2,048 cycles/32 ms |
| Refresh Mode | RAS-Only, CAS-before-RAS (CBR), and Hidden |
2,048 refresh cycles are required in each 32 ms period.
4,096 refresh cycles are required in each 64 ms period.
An initial pause of 200 µs is required followed by eight initialization cycles.