The ISSI IS62WV25616ALL/IS62WV25616BLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
The IS62WV25616ALL and IS62WV25616BLL are high‑speed, low‑power 4 M‑bit SRAMs organized as 256K words by 16 bits. They are fabricated with CMOS technology and feature fully static operation, three‑state outputs, and industrial‑grade temperature range. The devices are offered in a 44‑pin TSOP (Type II) and a 48‑pin mini BGA package.
Electrical specifications include a typical access time of 55 ns (max 70 ns), supply voltages of 1.65‑2.2 V for the ALL version and 2.5‑3.6 V for the BLL version, typical operating power of 36 mW, and standby current of 9 µW. Detailed timing, capacitance, and power‑supply characteristics are provided for both device variants.
| Memory size | 4 M‑bit (256K × 16) |
|---|---|
| Access time (typical) | 55 ns |
| Supply voltage (ALL version) | 1.65 V–2.2 V |
| Supply voltage (BLL version) | 2.5 V–3.6 V |
| Typical operating power | 36 mW |
| Industrial temperature range | -40 °C to +85 °C |
| Package options | 44‑pin TSOP (Type II) and 48‑pin mini BGA (6 mm × 8 mm) |
| Output capacitance | 10 pF |
The typical high‑speed access time is 55 ns, with a maximum of 70 ns.
The ALL version operates from 1.65 V to 2.2 V, while the BLL version operates from 2.5 V to 3.6 V.
They are available in a 44‑pin TSOP (Type II) and a 48‑pin mini BGA (6 mm × 8 mm) package.