This data sheet introduces IS41C85120A and IS41LV85120A, which are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write control, of upper and lower byte, makes the IS41C85120A and IS41LV85120A ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41C85120A and IS41LV85120A ideally suited for high band-width graphics, digital signal processing, high-performance computing systems and peripheral applications.
The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory devices. Both products offer accelerated cycle access EDO Page Mode, allowing 512 random accesses within a single row with an access cycle time as short as 10ns per 8-bit word. The Byte Write control for upper and lower bytes makes these devices ideal for use in 16 and 32-bit wide data bus systems.
| Capacity | 524,288 x 8-bit |
|---|---|
| Package | 28-pin SOJ |
| Refresh Interval | 1024 cycles/16 ms |
| Refresh Mode | RAS-Only, CAS-before-RAS (CBR), and Hidden |
| Power Supply (IS41C85120A) | 5V ± 10% |
| Power Supply (IS41LV85120A) | 3.3V ± 10% |
| Max. RAS Access Time | 60 ns |
| Max. CAS Access Time | 15 ns |
| Min. Fast Page Mode Cycle Time | 40 ns |
| Min. Read/Write Cycle Time | 110 ns |
| Operating Temperature | 0 to +70 °C |
| Storage Temperature | -55 to +125 °C |
The access cycle time is as short as 10ns per 8-bit word.
They support RAS-Only, CAS-before-RAS (CBR), and Hidden refresh modes.
Yes, a lead-free version is available.
1024 refresh cycles are required in each 16 ms period.