This data sheet introduces IS41C85120A and IS41LV85120A, which are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write control, of upper and lower byte, makes the IS41C85120A and IS41LV85120A ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41C85120A and IS41LV85120A ideally suited for high band-width graphics, digital signal processing, high-performance computing systems and peripheral applications.