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ISSI IS41LV16100A 1M x 16 DRAM Datasheet
The document describes the ISSI IS41LV16100A, a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The device features an accelerated cycle access called EDO Page Mode, allowing for fast random accesses within a single row with a minimum cycle time of 20 ns per 16-bit word.
Read onlineISSI IS41LV16100 specifications
| Memory Capacity | 1,048,576 x 16-bit (16-MBIT) |
|---|---|
| Supply Voltage | 3.3V ± 10% |
| Operating Temperature Range | -40°C to +85°C |
| Max. RAS Access Time (tRAC) | 60 ns (-50) / 50 ns (-60) |
| Min. EDO Page Mode Cycle Time | 40 ns |
All ISSI IS41LV16100 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating voltage for this DRAM?
The device operates with a single power supply of 3.3V, allowing for a tolerance range of ±10%.
What is the required refresh interval to retain data?
The memory requires 1,024 refresh cycles within each 16 ms period.
What is the maximum RAS Access Time?
The maximum RAS Access Time (t RAC) is 60 ns for the 5V version and 50 ns for the 3.3V version.
From: ISSI IS41C16100/IS41LV16100 1M x 16-bit Dynamic RAM Datasheet
How many refresh cycles are required per period?
1,024 refresh cycles are required in each 16 ms period.
From: ISSI IS41C16100/IS41LV16100 1M x 16-bit Dynamic RAM Datasheet