The IS41LV16100A is a high-performance CMOS dynamic random access memory (DRAM) from ISSI. It uses EDO page mode, supports 1,024 random accesses and has a 20ns access cycle time, making it ideal for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The document describes the ISSI IS41LV16100A, a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The device features an accelerated cycle access called EDO Page Mode, allowing for fast random accesses within a single row with a minimum cycle time of 20 ns per 16-bit word.
| Memory Capacity | 1,048,576 x 16-bit (16-MBIT) |
|---|---|
| Supply Voltage | 3.3V ± 10% |
| Operating Temperature Range | -40°C to +85°C |
| Max. RAS Access Time (tRAC) | 60 ns (-50) / 50 ns (-60) |
| Min. EDO Page Mode Cycle Time | 40 ns |
The device operates with a single power supply of 3.3V, allowing for a tolerance range of ±10%.
The memory requires 1,024 refresh cycles within each 16 ms period.
The device supports an industrial temperature range up to +85°C.