This document describes the features and characteristics of TOSHIBA GT60J322 insulated gate bipolar transistors, including enhancement mode, low saturation voltage, and maximum ratings.
This document is a technical datasheet for the Toshiba GT60J322, an N-channel IGBT designed for soft switching applications. It belongs to the 4th generation of Toshiba's product line and features low saturation voltage.
| Collector-emitter voltage (VcES) | 600 V |
|---|---|
| Gate-emitter voltage (VGES) | +25 V |
| DC Collector current | 60 A |
| Collector power dissipation (Tc = 25°C) | 200 W |
| Junction temperature | 150 °C |
| Storage temperature range | -55 ~ 150 °C |
The maximum collector-emitter voltage rating is 600 V.
The maximum storage temperature range is from -55°C to 150°C.